Figure 2.

X-ray diffraction measurements of GaN wires grown on Si (111) with an intermediate AlN layer. (a) Symmetric Θ-2Θ scan performed on a laboratory setup (approximately 0.179 nm Co-wavelength) and indexed with Si, GaN and AlN Bragg Kα1 reflections. Dots and squares correspond respectively to the Kα2 and Kβ excitation wavelengths. The broad and low intensity peak around 51° (see the triangle) is attributed to a diffraction tail of the Si substrate. (b) Rocking curves (Δω-scan) of the GaN (0002) and (0004) peaks. (c,d) Grazing incidence X-ray diffraction performed at ESRF along the <a onClick="popup('http://www.nanoscalereslett.com/content/8/1/61/mathml/M7','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/8/1/61/mathml/M7">View MathML</a> silicon direction (approximately 0.1203 nm wavelength and 0.18° incidence).

Salomon et al. Nanoscale Research Letters 2013 8:61   doi:10.1186/1556-276X-8-61
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