Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Damien Salomon; Amelie Dussaigne; Matthieu Lafossas; Christophe Durand; Catherine Bougerol; Pierre Ferret; Joel Eymery

doi:10.1186/1556-276X-8-61

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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Damien Salomon^*, Amelie Dussaigne, Matthieu Lafossas, Christophe Durand, Catherine Bougerol, Pierre Ferret and Joel Eymery

* Corresponding author: Damien Salomon damien.salomon@cea.fr

Nanoscale Research Letters 2013, 8:61 doi:10.1186/1556-276X-8-61

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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications