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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Damien Salomon12*, Amelie Dussaigne2, Matthieu Lafossas2, Christophe Durand1, Catherine Bougerol3, Pierre Ferret2 and Joel Eymery1

Author affiliations

1 Equipe mixte CEA-CNRS-UJF “Nanophysique et semiconducteurs”, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, 38054, France

2 CEA-Leti, MINATEC campus, Grenoble, 38054, France

3 Equipe mixte CEA-CNRS “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 rue des Martyrs, Grenoble, Cedex 9 38042, France

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Citation and License

Nanoscale Research Letters 2013, 8:61  doi:10.1186/1556-276X-8-61

Published: 7 February 2013

Abstract

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications.

Keywords:
Nitrides; Nanowires; LED; MOVPE; 81.07.Gf; 81.05.Er; 85.60.Jb