Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
1 Equipe mixte CEA-CNRS-UJF “Nanophysique et semiconducteurs”, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, 38054, France
2 CEA-Leti, MINATEC campus, Grenoble, 38054, France
3 Equipe mixte CEA-CNRS “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 rue des Martyrs, Grenoble, Cedex 9 38042, France
Nanoscale Research Letters 2013, 8:61 doi:10.1186/1556-276X-8-61Published: 7 February 2013
GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications.