Device fabrication. (top left) Material structure design where WG width is 7 μm. (top right) Cross-sectional scanning electron microscopy image of a sidewall of the QD-EAM fabricated using wet-etching techniques. (bottom left) Simulation of mode formed by a 7-μm waveguide with an etch depth of 1.2 μm. (bottom right) Fabricated device which is wire bonded to a GSG pad for RF measurements.
Lee et al. Nanoscale Research Letters 2013 8:59 doi:10.1186/1556-276X-8-59