Figure 8.

Comparison between proposed model and typical I-V characteristics of other types of transistors. (a) MOSFET with SiO2 gate insulator [50] (VGS = 0.5V), (b) TGN MOSFET with an ionic liquid gate, Cins >> Cq[49] (VGS = 0.5 V), (c) TGN MOSFET with a 3-nm ZrO2 wrap around gate, Cins~ Cq[49] (VGS = 0.37 V), (d) TGN MOSFET with a 3-nm ZrO2 wrap around gate, Cins ~ Cq[49] (VGS = 0.38 V).

Rahmani et al. Nanoscale Research Letters 2013 8:55   doi:10.1186/1556-276X-8-55
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