Table 1

L, Ravg, and AER of the SiNWs fabricated with different etching times
t (min) L (μm) Ravg (%) AER
0 0 35.79 1
2 1 8.14 9.06
5 2.5 5.98 21.15
10 5 3.62 40.31
20 10 2.97 81.62

t, L, Ravg, and AER are etching time, the length of the SiNWs, the average reflectivity (350 to 1,000 nm), and the surface area enhancement ratio, respectively.

Dong et al.

Dong et al. Nanoscale Research Letters 2013 8:544   doi:10.1186/1556-276X-8-544

Open Data