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Annealing temperature effect on self-assembled Au droplets on Si (111)

Mao Sui1, Ming-Yu Li1, Eun-Soo Kim1 and Jihoon Lee12*

Author Affiliations

1 College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul 139-701, South Korea

2 Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

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Nanoscale Research Letters 2013, 8:525  doi:10.1186/1556-276X-8-525

Published: 13 December 2013

Abstract

We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

Keywords:
Au droplets; Annealing temperature; Nanowires