Figure 2.

Current–voltage curves and the resistive switching characteristics of Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 RRAM devices. The schematic configuration of the Zr:SiO2 RRAM and bilayer Zr:SiO2/porous SiO2 RRAM in the inset of the figure.

Chang et al. Nanoscale Research Letters 2013 8:523   doi:10.1186/1556-276X-8-523
Download authors' original image