Open Access Nano Express

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

Kuan-Chang Chang1, Jen-wei Huang2*, Ting-Chang Chang34*, Tsung-Ming Tsai1, Kai-Huang Chen5, Tai-Fa Young6, Jung-Hui Chen7, Rui Zhang8, Jen-Chung Lou8, Syuan-Yong Huang1, Yin-Chih Pan1, Hui-Chun Huang1, Yong-En Syu3, Der-Shin Gan1, Ding-Hua Bao9 and Simon M Sze10

Author Affiliations

1 Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan

2 Department of Physics, R.O.C. Military Academy, Kaohsiung, Taiwan

3 Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4 Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan

5 Department of Electronics Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan

6 Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

7 Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan

8 School of Software and Microelectronics, Peking University, Beijing, People’s Republic of China

9 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, China

10 Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

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Nanoscale Research Letters 2013, 8:523  doi:10.1186/1556-276X-8-523

Published: 11 December 2013

Abstract

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.

Keywords:
RRAM; Porous SiO2; Space charge limited current; Zr