Open Access Highly Accessed Nano Express

Optical and structural properties of amorphous Se x Te100-x aligned nanorods

Faisal A Al-Agel

Author Affiliations

Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia

Nanoscale Research Letters 2013, 8:520  doi:10.1186/1556-276X-8-520

Published: 9 December 2013


In the present work, we report studies on optical and structural phenomenon in as-deposited thin films composed of aligned nanorods of amorphous SexTe100-x (x = 3, 6, 9, and 12). In structural studies, field emission scanning electron microscopic (FESEM) images suggest that these thin films contain high yield of aligned nanorods. These nanorods show a completely amorphous nature, which is verified by X-ray diffraction patterns of these thin films. Optical studies include the measurement of spectral dependence of absorption, reflection, and transmission of these thin films, respectively. On the basis of optical absorption data, a direct optical band gap is observed. This observation of a direct optical band gap in these nanorods is interesting as chalcogenides normally show an indirect band gap, and due to this reason, these materials could not become very popular for semiconducting devices. Therefore, this is an important report and will open up new directions for the application of these materials in semiconducting devices. The value of this optical band gap is found to decrease with the increase in selenium (Se) concentration. The reflection and absorption data are employed to estimate the values of optical constants (extinction coefficient (k) and refractive index (n)). From the spectral dependence of these optical constants, it is found that the values of refractive index (n) increase, whereas the values of extinction coefficient (k) decrease with the increase in photon energy. The real and imaginary parts of dielectric constants calculated with the values of extinction coefficient (k) and refractive index (n), are found to vary with photon energy and dopant concentration.

Chalcogenides; a-SexTe100-x; Melt quenching; Vacuum evaporation; Thin films; dc conductivity; Activation energy; Absorption coefficient; Optical band gap; Optical constants