Figure 3.

STM image of the homogeneous c (4 × 8) iron silicide thin film and line profile. (a) STM image (2,000 × 2,000 nm2; Vs = 2.0 V; I = 0.2 nA) of the homogeneous c (4 × 8) iron silicide phase grown at 750°C by depositing 1.5 ML of Fe on the Si (111) surface. The largest area of the c (4 × 8) tabular island is up to approximately 1.0 μm2. (b) The line profile along the line in (a) shows that the height of the c (4 × 8) tabular islands is approximately 6.3 Å with respect to the substrate terrace.

Zou et al. Nanoscale Research Letters 2013 8:510   doi:10.1186/1556-276X-8-510
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