STM image of the typical silicide islands and line profile showing the heights of A and B islands. (a) STM image (400 × 400 nm2; Vs = 2.0 V; I = 0.15 nA) of the typical silicide islands grown at 650°C by depositing 1 ML of Fe on the Si (111) surface. E and U represent the etched region and unetched region, respectively. Three types of islands are observed. A and B are the tabular islands grown above and below the unetched Si-adatom layer, respectively. C is the three-dimensional islands. Most of the A islands exhibit an equilateral-triangle shape. (b) The line profile along the line in (a) shows that the heights of A and B islands with respect to the etched surface region are approximately 7.9 and 1.9 Å, respectively.
Zou et al. Nanoscale Research Letters 2013 8:510 doi:10.1186/1556-276X-8-510