Table 2

Structures of the cross-point resistive switching memory devices
Devices BE ~ 200 nm Switching layer (10 nm) TE
Cu ~ 40 nm Al ~ 160 nm
S1 W GeOx
S2 W GeOx ×

Rahaman and Maikap

Rahaman and Maikap Nanoscale Research Letters 2013 8:509   doi:10.1186/1556-276X-8-509

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