Figure 5.

Current–voltage characteristics.I-V measurements of pristine (a) Cu/GeOx/W (S1) and (b) Al/GeOx/W (S2) devices. A high formation voltage is needed for Al TE. More than eight devices were measured randomly.

Rahaman and Maikap Nanoscale Research Letters 2013 8:509   doi:10.1186/1556-276X-8-509
Download authors' original image