Figure 3.

TEM images of the device using Al electrode. (a) HRTEM image of an Al/GeOx/W cross-point memory. (b) Formation of an AlOx film with a thickness of approximately 5 nm at the Al/GeOx interface is observed.

Rahaman and Maikap Nanoscale Research Letters 2013 8:509   doi:10.1186/1556-276X-8-509
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