Figure 1.

Schematic illustration and optical image of the Cu/GeOx/W cross-point memories. (a) Schematic illustration and (b) optical image of our fabricated cross-point memory devices. Active area of the cross-point memory is approximately 1 × 1 μm2. The thickness of the GeOx solid electrolyte film is approximately 10 nm.

Rahaman and Maikap Nanoscale Research Letters 2013 8:509   doi:10.1186/1556-276X-8-509
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