Figure 5.

Current-voltage characteristic curves. Measured for samples bridged over aluminum (Al) metal pads on p-type Si wafer with n-doped Ga2O3 film, Ga2O3 NP layer, and Ga2O3 NP/SWNT layer obtained by varying the dipping times in SWNT-dispersed solution (Inset: SEM images of the channel bridged with various films between the two Al metal pads formed on p-type Si wafer with a size of 10 μm × 20 μm).

Kim et al. Nanoscale Research Letters 2013 8:507   doi:10.1186/1556-276X-8-507
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