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Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

Kyoeng Heon Kim1, Ho-Myoung An2, Hee-Dong Kim1 and Tae Geun Kim1*

Author Affiliations

1 School of Electrical Engineering, Korea University, Seoul 136-713, Korea

2 Department of Digital Electronics, Osan College, Osan-si 447-749, Korea

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Nanoscale Research Letters 2013, 8:507  doi:10.1186/1556-276X-8-507

Published: 2 December 2013


We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.

Gallium oxide (Ga2O3) nanoparticles (NPs); Single-walled carbon nanotubes (SWNTs); Ultraviolet transparent conductive oxide (UV TCO)