Figure 2.

Current fitting of HRS and LRS of Zr:SiO2 and Zr:SiO2/C:SiO2 RRAM devices, respectively (a, b). The activation energy of HRS and LRS for hopping conduction is 74.7 and 47.4 meV, respectively.

Zhang et al. Nanoscale Research Letters 2013 8:497   doi:10.1186/1556-276X-8-497
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