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High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Rui Zhang1, Kuan-Chang Chang2, Ting-Chang Chang34*, Tsung-Ming Tsai2, Kai-Huang Chen5, Jen-Chung Lou1, Jung-Hui Chen6*, Tai-Fa Young7, Chih-Cheng Shih2, Ya-Liang Yang27, Yin-Chih Pan2, Tian-Jian Chu2, Syuan-Yong Huang2, Chih-Hung Pan2, Yu-Ting Su3, Yong-En Syu3 and Simon M Sze8

Author Affiliations

1 School of Software and Microelectronics, Peking University, Beijing 100871, People's Republic of China

2 Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3 Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4 Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 700, Taiwan

5 Department of Electronic Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan

6 Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan

7 Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan

8 Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

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Nanoscale Research Letters 2013, 8:497  doi:10.1186/1556-276X-8-497

Published: 21 November 2013


In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compared with single Zr:SiOx layer structure, Zr:SiOx/C:SiOx structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.

High performance; Graphene oxide; RRAM; Hopping conduction