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Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

Hongfeng Duan, Haiping He*, Luwei Sun, Shiyan Song and Zhizhen Ye*

Author Affiliations

Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, People's Republic of China

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Nanoscale Research Letters 2013, 8:493  doi:10.1186/1556-276X-8-493

Published: 21 November 2013


Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [10<a onClick="popup('http://www.nanoscalereslett.com/content/8/1/493/mathml/M2','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/8/1/493/mathml/M2">View MathML</a>0] to infrequent [02<a onClick="popup('http://www.nanoscalereslett.com/content/8/1/493/mathml/M3','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/8/1/493/mathml/M3">View MathML</a>3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.

In-doped ZnO nanowires; Infrequent [02<a onClick="popup('http://www.nanoscalereslett.com/content/8/1/493/mathml/M1','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/8/1/493/mathml/M1">View MathML</a>3] growth orientation; Large surface-to-volume ratio; Low density of surface traps