Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate
1 Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yusong-Gu, Daejeon 305-701, South Korea
2 Department of Mechanical Engineering, Seoul National University, Seoul, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, South Korea
Nanoscale Research Letters 2013, 8:489 doi:10.1186/1556-276X-8-489Published: 20 November 2013
Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer.