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Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

Hsin-Wei Huang, Chen-Fang Kang, Fang-I Lai, Jr-Hau He, Su-Jien Lin and Yu-Lun Chueh*

Nanoscale Research Letters 2013, 8:483  doi:10.1186/1556-276X-8-483

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