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Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

Hsin-Wei Huang1, Chen-Fang Kang2, Fang-I Lai3, Jr-Hau He2, Su-Jien Lin1 and Yu-Lun Chueh14*

Author Affiliations

1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2 Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan

3 Department of Photonics Engineering, Yuan Ze University, Taoyuan 32003, Taiwan

4 Center for Nanotechnology, Material Science and Microsystem, National Tsing Hua University, Hsinchu 30013, Taiwan

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Nanoscale Research Letters 2013, 8:483  doi:10.1186/1556-276X-8-483

Published: 16 November 2013


We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

ZnO; O2 partial pressure; Oxygen defects; Resistive change memory