Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio
1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
2 Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
3 Department of Photonics Engineering, Yuan Ze University, Taoyuan 32003, Taiwan
4 Center for Nanotechnology, Material Science and Microsystem, National Tsing Hua University, Hsinchu 30013, Taiwan
Nanoscale Research Letters 2013, 8:483 doi:10.1186/1556-276X-8-483Published: 16 November 2013
We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.