Table 1

Calculated Schottky diode parameters for Pt/n-GaN Schottky diodes
Temperature (K) Ideality factor Apparent SBH (eV) Reverse leakage current (IR) atVR= -1 V
100 0.31 3.40 6 × 10-11
140 0.45 2.41 1 × 10-11
180 0.59 1.86 4 × 10-11
220 0.72 1.51 2 × 10-12
260 0.85 1.40 5 × 10-11
300 1.03 1.48 5 × 10-11
340 1.10 1.25 5 × 10-11

Kumar et al.

Kumar et al. Nanoscale Research Letters 2013 8:481   doi:10.1186/1556-276X-8-481

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