Figure 3.

Retention characteristics. The memory device shows a stable low-resistance state with for 103 s (blue line). After switching to the high-resistance state by applying a 1.2-V write pulse of 10 ms duration, stable current is observed again. The dashed lines are the interpolation to 104 s (red line).

Umair et al. Nanoscale Research Letters 2013 8:476   doi:10.1186/1556-276X-8-476
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