SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Nano Express

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

Liang-Wen Ji1, Yu-Jen Hsiao2, I-Tseng Tang3*, Teen-Hang Meen4, Chien-Hung Liu5, Jenn-Kai Tsai3, Tien-Chuan Wu3 and Yue-Sian Wu1

Author Affiliations

1 Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan

2 National Nano Device Laboratories, Tainan 741, Taiwan

3 Department of Greenergy Technology, National University of Tainan, Tainan 700, Taiwan

4 Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan

5 Department of Mechanical Engineering, National Chung-Hsing University, Taichung 402, Taiwan

For all author emails, please log on.

Nanoscale Research Letters 2013, 8:470  doi:10.1186/1556-276X-8-470

Published: 9 November 2013

Abstract

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

Keywords:
Heterojunction; Nanocrystal; ZnS