Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction
1 Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan
2 National Nano Device Laboratories, Tainan 741, Taiwan
3 Department of Greenergy Technology, National University of Tainan, Tainan 700, Taiwan
4 Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
5 Department of Mechanical Engineering, National Chung-Hsing University, Taichung 402, Taiwan
Nanoscale Research Letters 2013, 8:470 doi:10.1186/1556-276X-8-470Published: 9 November 2013
The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.