Figure 5.

STM images and topography profile of the parallel 9-NW array on the Si(110) surface. A series of different magnified STM topographic images of the parallel-aligned and periodic 9-NWs: (a) 250 × 250 nm2 (Vb = +2.5 V, It = 80 pA), (b) 125 × 125 nm2, and (c) 25 × 25 nm2 (Vb = +2.0 V, It = 60 pA). Two zigzag lines and two parallel dashed lines are sketched at both sides and the middle of a 9-NW in (a) and (c) to indicate the formation of two zigzag chains and one linear row in a 9-NW. (d) Cross-sectional profile of A2 across parallel-aligned 9-NWs along the white lines indicated in (b). (e) Cross-sectional profile of B1 across the substrate along the white lines indicated in (a). The inset of (a) displays the zoom-in STM image of the substrate. The inset of (c) shows the filled-state image of the 9-NW at Vb = -1.5 V, It = 20 pA.

Hong et al. Nanoscale Research Letters 2013 8:458   doi:10.1186/1556-276X-8-458
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