Figure 4.

STM images and topography profile of the parallel 6-NW array on the Si(110) surface. A series of different magnified STM topographic images of the parallel-aligned and periodic 6-NWs: (a) 120 × 120 nm2 (Vb = +2.5 V, It = 60 pA), (b) 45 × 45 nm2 (Vb = 2.0 V, It = 40 pA), and (c, d) dual-polarity STM images (35 × 18 nm2) acquired at +1.5 and -1.5 V, respectively, and at 40 pA. Two zigzag lines are sketched on a 6-NW in (b) to indicate the formation of double zigzag chains in a 6-NW. (e) Cross-sectional profiles of E1 and F1 across the empty-state and filled-state images of parallel-aligned 6-NWs along the white dashed lines indicated in (c) and (d), respectively.

Hong et al. Nanoscale Research Letters 2013 8:458   doi:10.1186/1556-276X-8-458
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