Figure 3.

STM images and topography profile of the parallel 3-NW array on the Si(110) surface. A series of different magnified STM topographic images of the parallel-aligned and periodic 3-NWs: (a) 120 × 120 nm2 (Vb = +2.0 V, It = 60 pA), (b) 50 × 50 nm2, and (c, d) dual-polarity STM images (40 × 20 nm2) acquired at +1.2 and -1.2 V, respectively, and at 30 pA. (e) Cross-sectional profile A1 across parallel-aligned 3-NWs along the white line indicated in (b).

Hong et al. Nanoscale Research Letters 2013 8:458   doi:10.1186/1556-276X-8-458
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