Figure 2.

Growth evolution of epitaxial CeSix NWs on the Si(110) surfaces for different Ce coverages. The STM morphologies of CeSix NWs grown on the Si(110) surfaces for different Ce coverages: (a) 1 ML, (b) 3 ML, (c) 5 ML, (d) 6 ML, and (e) 9 ML. The image scale of 5 nm is indicated by a bar.

Hong et al. Nanoscale Research Letters 2013 8:458   doi:10.1186/1556-276X-8-458
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