Figure 1.

STM images and topography profile of the atomically clean Si(110)-16 × 2 surface. A series of STM topographic images of the atomically clean Si(110)-16 × 2 surface taken at different magnifications: (a) 850 × 850 nm2 (bias voltage Vb = +2.0 V, tunneling current It = 0.1 nA), (b) 70 × 70 nm2, and (c, d) dual-polarity STM images (25 × 15 nm2) acquired at +1.6 and -1.6 V, respectively, and at 20 pA. (e) Topography profile C across the up-and-down terraces of the 16 × 2 superstructure along the white lines indicated in (b).

Hong et al. Nanoscale Research Letters 2013 8:458   doi:10.1186/1556-276X-8-458
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