Figure 6.

Atomically resolved STM image of the manganese silicide NW and its tunneling current-voltage properties. (a) Atomically resolved STM image (10 × 10 nm2) of an ultrafine manganese silicide NW grown on the Si(110) surface and (b) the scanning tunneling spectra measured on top of the NW showing semiconducting characteristics with a bandgap of approximately 0.8 eV. The red and blue curves were obtained on two different positions on the NW.

Zou et al. Nanoscale Research Letters 2013 8:45   doi:10.1186/1556-276X-8-45
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