Figure 3.

Normalized photocurrent rise curves and fitted carrier lifetime versus intensity. (a) The normalized photocurrent rise curves under inter-band excitation (λ = 325 nm) with selected intensity and (b) fitted carrier lifetime versus intensity measured at a bias of 0.1 V for the V2O5 NW with d = 800 nm and l = 2.5 μm.

Chen et al. Nanoscale Research Letters 2013 8:443   doi:10.1186/1556-276X-8-443
Download authors' original image