Figure 6.

Carrier transport mechanism. (a) Forward I-V curves for different measurement temperatures, (b) the parameter B, and (c) Arrhenius plot of ln(Is) versus 1,000/T for the Si QD-embedded ZnO thin film annealed at 700°C.

Kuo et al. Nanoscale Research Letters 2013 8:439   doi:10.1186/1556-276X-8-439
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