Resolution:
standard / ## Figure 5.
C-AFM measurements of a-TaN_{x}. (a) Positive I-V curves (solid lines) of TaN_{x} deposited on Au for four different points fitted by the space-charge-limited current
(SCLC) model (dash lines). (b) Negative I-V curves (solid lines) of TaN_{x} deposited on Au for the same points presented in (a) fitted by the SCLC model (dash lines). (c) Positive I-V curves of TaN_{x} deposited on Si for three different points. The conductive part of the I-Vs exhibits
an almost parabolic to almost ohmic behavior (d) Negative I-V curves of TaN_{x} deposited on Si for the points presented in (b). In all I-Vs, the leakage current is quite high, displaying also a very noisy profile.
Spyropoulos-Antonakakis |