Figure 5.

C-AFM measurements of a-TaNx. (a) Positive I-V curves (solid lines) of TaNx deposited on Au for four different points fitted by the space-charge-limited current (SCLC) model (dash lines). (b) Negative I-V curves (solid lines) of TaNx deposited on Au for the same points presented in (a) fitted by the SCLC model (dash lines). (c) Positive I-V curves of TaNx deposited on Si for three different points. The conductive part of the I-Vs exhibits an almost parabolic to almost ohmic behavior (d) Negative I-V curves of TaNx deposited on Si for the points presented in (b). In all I-Vs, the leakage current is quite high, displaying also a very noisy profile.

Spyropoulos-Antonakakis et al. Nanoscale Research Letters 2013 8:432   doi:10.1186/1556-276X-8-432
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