Figure 6.
PL spectra of Pr-doped and undoped HfSiOxand undoped pure HfO2films excited at 285 nm. The films were annealed at 1,000°C. Inset table is data of the fitting peaks.
An et al. Nanoscale Research Letters 2013 8:43 doi:10.1186/1556-276X-8-43 |
