Figure 6.

PL spectra of Pr-doped and undoped HfSiOxand undoped pure HfO2films excited at 285 nm. The films were annealed at 1,000°C. Inset table is data of the fitting peaks.

An et al. Nanoscale Research Letters 2013 8:43   doi:10.1186/1556-276X-8-43
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