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Open Access Highly Accessed Retraction

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Amit Prakash*, Siddheswar Maikap, Hsien-Chin Chiu, Ta-Chang Tien and Chao-Sung Lai

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Nanoscale Research Letters 2013, 8:419  doi:10.1186/1556-276X-8-419


The electronic version of this article is the complete one and can be found online at: http://www.nanoscalereslett.com/content/8/1/419


Received:9 October 2013
Accepted:9 October 2013
Published:22 October 2013

© 2013 Prakash et al.; licensee Springer.

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Retraction

This article is retracted.

The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

The revised version of this article has now been published, and is available online [2].

References

  1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

    Nanoscale Research Letters 2013, 9:152. OpenURL

  2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

    Nanoscale Research Letters 2014, 9:125. PubMed Abstract | BioMed Central Full Text OpenURL