Table 2

Data comparison in published literature
Device structure Device size (μm2) Set/reset voltage (V) Current compliance (μA) Retention (s) Resistance ratio Endurance (cycles)
W/TiOx/TaOx/TiN [41] 0.15 × 0.15 3.0/-3.0 80 >3 h, 85°C 100 104
Ir or Pt/Ta2O5-δTa2-β/Pt [109,120] 0.5 × 0.5 -1/+0.8 80/150 >107 ~10 109
Pt/Ta2O5-x/TaO2-x/Pt [31] 50 × 50-0.03 × 0.03 -2.0/+2.0 40-200 10 years, 85°C ~10 1012
Ru/Ta2O5/TiO2/Ru [137] 4 × 4 +2.7/-1.0 ~100 >106 ~50 106
TiN/Ti/HfOx/TiN [16,138] ~0.4 × 0.4-0.03 × 0.03 1.0/-1.5 40, 200 >104, 200°C ~100 108
Hf, Ti, Ta/HfO2/TiN [85] 0.04 × 0.04 +1.8/-3 100 >104, 200°C ~10 1010
TiN/Hf/HfO2/TiN [139] 0.01 × 0.01 ±0.5 <80 105, 200°C ~100 5 × 107
Pt/ZrOx/HfOx/TiN [83] 0.05 × 0.05 0.6/-1.5 50 105, 125°C ~100 106
TiN/WOx/TiN [140] 0.06 × 0.06 -1.4/+1.6 400 2 × 103 h, 150°C ~10 106

Prakash et al.

Prakash et al. Nanoscale Research Letters 2013 8:418   doi:10.1186/1556-276X-8-418

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