Figure 10.

Schematic of switching mechanism and I-V characteristics of cross-point memory devices. (a) Schematic representation of the TaOx device consisting of a thin Ta2O5-x insulating layer and a TaO2-x base layer. The movement of internal oxygen ions or vacancies is used to model the switching. (b) SEM image of a 30-nm crossbar array of devices with the inset showing a single device. (c) TEM cross-section of a 30-nm crossbar cell. The total thickness of TaOx layer is 30 nm. (d) I-V hysteresis characteristics [31].

Prakash et al. Nanoscale Research Letters 2013 8:418   doi:10.1186/1556-276X-8-418
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