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Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching

Hidetaka Asoh*, Kousuke Fujihara and Sachiko Ono

Author affiliations

Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

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Citation and License

Nanoscale Research Letters 2013, 8:410  doi:10.1186/1556-276X-8-410

Published: 4 October 2013


Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved.

Silicon nanohole; Electroless deposition; Noble metal dot arrays; Metal-assisted chemical etching; High aspect ratio; Anodic porous alumina