Figure 4.

Density-controlled growth of CNTs using the tilted mask. (a) Schematic image showing control of the density of deposited nanoparticles using the tilted mask. The angle between the mask and the substrate is 4.76°. The (d) to (f) in (a) represent the distances and blurring of the deposited particles at the corresponding positions, (d) to (f) in (c). The distances between the mask and the substrate at points (d) to (f) are 1.58, 2.08, and 2.16 mm, respectively. (b) Schematic of the shadow mask with line pattern. (c) Arranged SEM images to show the CNT line pattern. (d) to (f) High-magnification images of each point in (c) clearly showing the density difference.

Na et al. Nanoscale Research Letters 2013 8:409   doi:10.1186/1556-276X-8-409
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