Figure 6.

Magnetic field dependence. (a) Magnetic field dependence of the resistance for the 4-μm-diameter bismuth microwire with the current at 100 μA. The inset of (a) shows a SEM micrograph of the electrodes fabricated by FIB on the bismuth microwire. Magnetic field dependence of the Hall resistance evaluated from the measured resistance (b) in the range from 0 to 1 T and (c) in the low magnetic field range from 0 to 85 mT with the expected values for bulk bismuth in two directions. (d-f) Magnetic field dependence of the Hall resistance at 250, 200, and 150 K.

Murata and Hasegawa Nanoscale Research Letters 2013 8:400   doi:10.1186/1556-276X-8-400
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