Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide
1 Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland
2 CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, Ensicaen 6 Blvd Maréchal Juin, 14050, Caen Cedex 4, France
Nanoscale Research Letters 2013, 8:40 doi:10.1186/1556-276X-8-40Published: 21 January 2013
Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal environment. By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order.
78.67.Bf, 78.67.Pt, 73.63.Bd, 78.47.D, 74.25.Nd