The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells
1 Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou, Jiangsu 213164, China
2 Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, Jiangsu 213164, China
3 Center of Micro/Nano Science & Technology, Jiangsu University, Zhenjiang 212013, China
Nanoscale Research Letters 2013, 8:396 doi:10.1186/1556-276X-8-396Published: 23 September 2013
Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed.