Figure 1.

Typical interconnect scheme of an α-Si:H module in superstrate configuration. P1, P2 and P3 indicate the different patterning steps. P1 is performed using an infrared laser to remove the front TCO. P2 and P3 use a green laser to cut the Si solar absorber layer and the rear electrode, respectively.

Crupi et al. Nanoscale Research Letters 2013 8:392   doi:10.1186/1556-276X-8-392
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