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Table 1
APT compositions of the Er-doped SRSO layer in the as-deposited and 1,100°C 1-h annealed state
	As-deposited	Annealed at 1,100°C
Si (at.%)	35.1 ± 0.4	35.0 ± 0.4
O (at.%)	63.2 ± 0.4	63.1 ± 0.4
Er (at.%)	1.7 ± 0.4	1.9 ± 0.4
Er (at·cm⁻³)	1.1 × 10²¹	1.3 × 10²¹
Si excess (at.%)	Approximately 3.6 %	Approximately 3.5%

Talbot et al. Nanoscale Research Letters 2013 8:39 doi:10.1186/1556-276X-8-39

Table 1