Table 1

APT compositions of the Er-doped SRSO layer in the as-deposited and 1,100°C 1-h annealed state
As-deposited Annealed at 1,100°C
Si (at.%) 35.1 ± 0.4 35.0 ± 0.4
O (at.%) 63.2 ± 0.4 63.1 ± 0.4
Er (at.%) 1.7 ± 0.4 1.9 ± 0.4
Er (at·cm−3) 1.1 × 1021 1.3 × 1021
Si excess (at.%) Approximately 3.6 % Approximately 3.5%

Talbot et al.

Talbot et al. Nanoscale Research Letters 2013 8:39   doi:10.1186/1556-276X-8-39

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