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Fabrication and photoresponse of ZnO nanowires/CuO coaxial heterojunction

Jen-Kai Wu1, Wei-Jen Chen1, Yuan Huei Chang12*, Yang Fang Chen12, Da-Ren Hang34*, Chi-Te Liang15* and Jing-Yu Lu1

Author Affiliations

1 Department of Physics, National Taiwan University, Taipei 106, Taiwan

2 Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan

3 Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 804, Taiwan

4 Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 804, Taiwan

5 School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, South Korea

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Nanoscale Research Letters 2013, 8:387  doi:10.1186/1556-276X-8-387

Published: 17 September 2013


The fabrication and properties of n-ZnO nanowires/p-CuO coaxial heterojunction (CH) with a photoresist (PR) blocking layer are reported. In our study, c-plane wurtzite ZnO nanowires were grown by aqueous chemical method, and monoclinic CuO (111) was then coated on the ZnO nanowires by electrochemical deposition to form CH. To improve the device performance, a PR layer was inserted between the ZnO buffer layer and the CuO film to serve as a blocking layer to block the leakage current. Structural investigations of the CH indicate that the sample has good crystalline quality. It was found that our refined structure possesses a better rectifying ratio and smaller reverse leakage current. As there is a large on/off ratio between light on and off and the major light response is centered at around 424 nm, the experimental results suggest that the PR-inserted ZnO/CuO CH can be used as a good narrow-band blue light detector.

ZnO nanowires; CuO; Coaxial heterojunction